Lecturer Iowa State University Materials Science and Engineering 2220T Hoover Hall Ames, IA 50011-3025 Phone: 515-294-3070 Fax: 515-294-5444 alcon@iastate.edu
Education
Northwestern University, Evanston, IL Ph.D. 1987, Materials Science & Engineering
Cornell University, Ithaca, NY B.S. 1981, Materials Science & Engineering
Academic Experience
Lecturer 2004 to present. Assistant Professor, Materials Science & Engineering, Iowa State Univ., Jan. 2002-2004.
Assistant Professor, Materials Science & Engineering, Iowa State University, 1998-2001.
Associate Scientist, Materials Research Center, Institute for Physical Research & Technology, Iowa State University, 1992-1998.
Senior Process Development Engineer, Advanced Semiconductor Development Group, Digital Equipment Corporation, Hudson, MA, 1988-1992.
Graduate Assistant, Materials Science and Engineering Department, Northwestern University, 1981-1987
Research Interests
Dr. Constant's research interests Pulsed Laser Deposition of thin film materials. Area of current interest - wear resistant coatings.
Research Description
AlMgB14 thin film coatings
Grants and Contracts
Teaching
MSE 331 Fall,
MSE 272 Fall and Spring,
MSE 273X Spring,
MSE 424 Spring
Publications
Y. Tian, G. Li, N.L. Wang, B.A. Cook, A. P. Constant, and A. M. Russell, Anomolous electrical transport behaviors in amorphous AlMgB14 films, Applied Physics Letters (Accepted for publication) 2003.
M. R. Wills, R. Shinar, and A. P. Constant, Metastable Ge,C films by Reactive Pulsed Laser Deposition, J. Appl. Phys. (submitted July 2003)
Y. Tian, A. F. Bastawros A. Constant, C. C. H. Lo, J. W. Anderegg, A. M. Russell, Superhard, self-lubricating AlMgB14 films for microelectromachanical devices, Applied Physics Letters, vol 84 (14), Oct. 2003
Y. Tian, A. Constant, C. C. H. Lo, J. W. Anderegg, A. M. Russell, J. E. Snyder, P. Molian Microstructure Evolution of Al-Mg-B Thin Films by Thermal Annealing, Journal of Vacuum Science and Technology A, 21(4), July 2003.
M. R. Wills, R. Shinar, and A. P. Constant, Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films, MRC Proceedings, April 2003.
N. Wong, K. Ulmer, J. Snyder, A. Constant, Large Magnetic Moments in the Fe-N System?, Journal of Vacuum Science and Technology A, 2003.
H. Kavak, H. Shanks, C. Gruber, A. Constant and A. Landin, Amorf Silisyuum Ince Film Transistorlerin Karakterizayonu ve Modellemes Turkish Journal of Physics, 2000
H. Kavak, R. Esen, H. Shanks, C. Gruber, A. Landin and A. Constant, PECVD Teknigi ile Uretilmis, aSiNX:H Ince Filmlerin Optik Karakterizasyonu Turkish Journal of Physics, 2000
Hamide Kavak, Carl Gruber, Howard Shanks, Allen Landin, Alan Constant, and Stanley Burns, Thin Film Transistors on Polyimide Substrates, J. Non-Cryst. Solids, 266-269 (2000) 1325-1428.
Mohanavelu, R., Cann, D.P. and Constant, A.,. "Synthesis of New Pyrochlore Compounds for Transparent Conductor Applications,: Proc. 9th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Okinawa, Japan, (1999) 273.
H. Niska, AlliedSignal Corp, Phoenix AZ, A. P. Constant, T. Witt, Iowa State University, Ames IA, & O. Gregory Univ. Rhode Island, Kingston RI , Chemical Vapor Deposition Of Alpha Aluminum Oxide for High-Temperature Aerospace Sensors, Amer. Vac. Soc. 1999.
Constant, T. Witt, K. Bratland, H. Shanks, A. Landin, Thin Film Transistors Based on Microcrystalline Silicon on Polyimide Substrates MRC Proceedings, April 1999.
S. G. Burns, H. R. Shanks, A. P. Constant, C. Gruber, D. Schmidt, A. Landin, and F. Olympie, "Design And Fabrication Of High Current Switching TFTs On Flexible Polyimide Substrates", The Electrochemical Society 3d Symposium on TFTs, Y.Kuo ed. 1996
H. R. Shanks, S. G. Burns, A. Constant, D. Schmidt, A. Landin, C. Gruber, Hamide Kavak, and Richard Swisher, "Recent Advances In The Use Of Polyimide As A Substrate Material For Ultra-Thin Electronics", The Seventh Meeting of THE DUPONT SYMPOSIUM On Polyimides in Microelectronics, 16-18 September 1996, Wilmington, Delaware. Invited Paper. (Proceedings)
Constant, S. G. Burns, H. R. Shanks, C. Gruber, A. Landin, D. Schmidt, C. Thielen, F. Olympie, T. Schumacher, and J. Cobbs, "Development of Thin Film Transistor Based Circuits on Polyimide Substrates", The Electrochemical Society 186th. Meeting, October 9-14, 1994, Miami, Florida. (Proceedings)
G. Burns, H. R. Shanks, A. Constant, C. Gruber, D. Schmidt, A. Landin, C. Thielen, F. Olympie, T. Schumacher, and J. Cobbs, "Design and Fabrication of a-Si:H Based EEPROM Cells", The Electrochemical Society 186th. Meeting, October 9-14, 1994, Miami, Florida.
S.G. Burns, H. Shanks, A. Constant, C. Gruber, D. Schmidt, A. Landin, F. Olympie, Iowa State University and S. Riggio, Florida Atlantic University, Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Circuit Development for use in Large Memories, (ARPA TFT Display Technology Proceedings, 1993).
T.E. Clark, A.P. Constant, Digital Equipment Corporation, and M. Chang and C. Leung, Applied Materials Corporation, High-Pressure Blanket CVD Tungsten, Microelectronics Manufacturing and Testing, 35-37, May 1990.
T.E. Clark, A.P. Constant, Digital Equipment Corporation, and M. Chang and C. Leung, Applied Materials Corporation, High-Pressure Blanket CVD Tungsten, Tungsten and Other Advanced Metals for VLSI/ULSI Applications V, S. Simon Wong and S. Furikawa (ed.), Materials Research Society, Pittsburgh, PA, 167-178 (1989).
A.P. Constant and B.W. Wessels, Radiative Defects in Electron Irradiated InP, Defects in Semiconductors, H.J. vonBardeleben (ed.), Materials Science Forum, Trans. Tech. Pub. Ltd., Switzerland, 10-12, 1027-1032 (1986).
Constant, B.W. Wessels, Deep Level Defects in InP, Northwestern University, Elec. Mat. Conference, Univ. Mass., 1985? (Presentation, proceedings paper too?)
S.W. Sun, A.P. Constant, C.D. Adams and B.W. Wessels, Defect Centers in High Purity Hydride VPE Indium Phosphide, J. of Cryst. Growth, 64, 149-157 (1983).
Presentations
M. R. Wills, R. Shinar, and A. P. Constant, Metastable Ge,C films by Reactive Pulsed Laser Deposition, J. Appl. Phys. ICAMS 2003
M. R. Wills, R. Shinar, and A. P. Constant, Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films, MRC April 2003
N. Wang, K. M. Ulmer, A. P. Constant, J. W. Anderegg, and J. E. Snyder, "Phase formation and magnetic properties of Fe-N thin films deposited by reactive pulsed laser deposition", accepted for presentation at the American Physical Society 2003 March Meeting, Austin TX, March 2-7, 2003.
A. P. Constant, N. Wang, K. Ulmer, J. E. Snyder, Giant Magnetic Moments in the Fe-N System? , Microelectronics Research Center Seminar, May 21, 2002.
Jane Clayton, Alan Constant, David Cann , Synthesis of AgInO2 delafossite by Cation Exchange. Poster presentation at ,ACerS ,April 2001.
Jane Clayton, Alan Constant, and David Cann, IMAPS, AgInO2: Synthesis and Electronic Properties Presentation given October 9, 2001.
A. P. Constant, T. Witt, K. Bratland, H. Shanks, A. Landin, Thin Film Transistors Based on Microcrystalline Silicon on Polyimide Substrates MRC Proceedings, April 1999. (poster)
Kurt Ulmer, Thin Film Nitrides by Reactive PLD, Iowa Academy of Sciences, April 27, 2000 (student)
Jane Clayton, Spinels -Transparent Conducting Oxides, Iowa Academy of Sciences, April 27, 2000 (student)
Ravi Mohanavelu, Pyrochlores -Transparent Conducting Oxides, Iowa Academy of Sciences, April 27, 2000 (student)
Jane Clayton, Spinels -Transparent Conducting Oxides, American Ceramics Society, May 3, 2000 (student)
Ravi Mohanavelu, Pyrochlores -Transparent Conducting Oxides, American Ceramics Society, May 3, 2000 (student)
Constant, B.W. Wessels, Deep Level Defects in InP, Northwestern University, TMS Electronic Materials Conference, Univ. Mass., 1984 (presentation)
Constant, B.W. Wessels, Irradiation Induced Deep Level Defects in InP, Northwestern University, TMS Electronic Materials Conference, Santa Barbara CA, 1987 (presentation)
Patents
Patent Disclosure; Y. Tian et al. An Ultra-hard, Low friction Coating Based on AlMgB14 for Reduced Wear of MEMS and other Tribological Components and Systems 2003
Flowable Oxides Based on Alkoxysilane Precursors Micron Tech. Disclosure, 2002
Method of Making Amorphous Silicon on Insulator VLSI Circuit Structures with Floating Gate - Awarded 2000, US Patent # 6,017,794
Dielectric for Amorphous Silicon Transistors - Awarded 1999, US Patent # 5,856,690
Amorphous Silicon on Insulator VLSI Circuit Structures - Awarded 1998, US Patent # 5,742,075